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Electronic properties of the semiconductor RuIn3

Identifieur interne : 007A64 ( Main/Repository ); précédent : 007A63; suivant : 007A65

Electronic properties of the semiconductor RuIn3

Auteurs : RBID : Pascal:07-0302042

Descripteurs français

Pascal (Inist)
- Structure électronique, Effet température, Conductivité électrique, Semiconductivité, Haute température, Bande interdite, Anisotropie, Energie activation, Chaleur massique, Structure bande, Semiconducteur, Monocristal, Réseau quadratique, Ruthénium alliage, Indium alliage, Composé intermétallique, 7120L, 7215E.

English descriptors

KwdEn :
- Activation energy, Anisotropy, Band structure, Electrical conductivity, Electronic structure, Energy gap, High temperature, Indium alloys, Intermetallic compounds, Monocrystals, Ruthenium alloys, Semiconductivity, Semiconductor materials, Specific heat, Temperature effects, Tetragonal lattices.

Abstract

Temperature-dependent measurements of the resistivity of RuIn₃ single crystals show a semiconducting behaviour, in contrast to previously published results (Roof et al 1986 Powder Diffr. 1 20; Pöttgen 1995 J. Alloys Compounds 226 59). In the high-temperature range the semiconducting gap was measured to be 0.4-0.5 eV. We observe an anisotropy of the resistivity along [110] and [001] orientations of the tetragonal single crystals. At low temperatures two activation energies of impurities were estimated to 1 and 10 meV. The temperature dependence of the specific heat and the band structure calculations also show a semiconducting behaviour of RuIn₃.

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Le document en format XML

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<author><name sortKey="Bogdanov, D" uniqKey="Bogdanov D">D. Bogdanov</name>
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<s2>37077 Göttingen</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Allemagne</country>
<placeName><region type="land" nuts="2">Basse-Saxe</region>
<settlement type="city">Göttingen</settlement>
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<author><name sortKey="Winzer, K" uniqKey="Winzer K">K. Winzer</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Physikalisches Institut, Georg-August-Universitat Göttingen</s1>
<s2>37077 Göttingen</s2>
<s3>DEU</s3>
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<author><name sortKey="Nekrasov, I A" uniqKey="Nekrasov I">I. A. Nekrasov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Electrophysics, Russian Academy of Sciences</s1>
<s2>620016, Ekaterinburg</s2>
<s3>RUS</s3>
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<country>Russie</country>
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<author><name sortKey="Pruschke, T" uniqKey="Pruschke T">T. Pruschke</name>
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<s2>37077 Göttingen</s2>
<s3>DEU</s3>
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<term>Energy gap</term>
<term>High temperature</term>
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<term>Monocrystals</term>
<term>Ruthenium alloys</term>
<term>Semiconductivity</term>
<term>Semiconductor materials</term>
<term>Specific heat</term>
<term>Temperature effects</term>
<term>Tetragonal lattices</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Structure électronique</term>
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<term>Structure bande</term>
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<term>Monocristal</term>
<term>Réseau quadratique</term>
<term>Ruthénium alliage</term>
<term>Indium alliage</term>
<term>Composé intermétallique</term>
<term>7120L</term>
<term>7215E</term>
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<front><div type="abstract" xml:lang="en">Temperature-dependent measurements of the resistivity of RuIn<sub>3</sub>
 single crystals show a semiconducting behaviour, in contrast to previously published results (Roof et al 1986 Powder Diffr. 1 20; Pöttgen 1995 J. Alloys Compounds 226 59). In the high-temperature range the semiconducting gap was measured to be 0.4-0.5 eV. We observe an anisotropy of the resistivity along [110] and [001] orientations of the tetragonal single crystals. At low temperatures two activation energies of impurities were estimated to 1 and 10 meV. The temperature dependence of the specific heat and the band structure calculations also show a semiconducting behaviour of RuIn<sub>3</sub>
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Electronic properties of the semiconductor RuIn3

Electronic properties of the semiconductor RuIn3

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

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